The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Jun. 29, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsung-Han Tsai, Zhunan Township, Miaoli County, TW;
Po-Jen Wang, Taichung, TW;
Chun-Li Wu, Tainan, TW;
Ching-Hung Kao, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first semiconductor layer, an insulating layer and a second semiconductor layer in a substrate. The method also includes forming a first isolation feature in the first semiconductor layer, the insulating layer and the second semiconductor layer. The method further includes forming a transistor in and over the substrate adjacent to the first isolation feature. In addition, the method includes etching the first isolation feature to form a trench extending below the insulating layer. The method also includes filling the trench with a metal material to form a second isolation feature in the first isolation feature.