The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Nov. 16, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chun-Heng Wu, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/1037 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/7851 (2013.01);
Abstract
The present disclosure relates to a FinFET structure and a method of manufacturing the same. The FinFET structure includes a first fin and a second fin. The first fin is over a first base and has a first channel region. The first channel region has a first channel length. The second fin is over a second base and has a second channel region. The second channel region has a second channel length. The second channel length is different from the first channel length.