The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Dec. 28, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

James S. Rehmeyer, Boise, ID (US);

Debra M. Bell, Boise, ID (US);

George B. Raad, Boise, ID (US);

Brian P. Callaway, Boise, ID (US);

Joshua E. Alzheimer, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 11/403 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40618 (2013.01); G11C 11/403 (2013.01); G11C 11/4085 (2013.01);
Abstract

A memory device may include a phase driver circuit that may output a first voltage for refreshing a plurality of memory cells. The memory device may also include a plurality of word line driver circuits that may receive the first voltage via the phase driver circuit, such that each word line driver circuit of the plurality of word line driver circuits may provide the first voltage to a respective word line associated with a respective portion of the plurality of memory cells. In addition, each word line driver circuit may refresh the respective portion of the plurality of memory cells based on a respective word line enable signal provided to a first switch of the respective word line driver circuit.


Find Patent Forward Citations

Loading…