The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

May. 06, 2020
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Ye Lu, San Diego, CA (US);

Zhongze Wang, San Diego, CA (US);

Periannan Chidambaram, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 7/523 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01); G06N 3/063 (2006.01);
U.S. Cl.
CPC ...
G06F 7/523 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01); G06N 3/0635 (2013.01);
Abstract

A bit cell circuit of a most-significant bit (MSB) of a multi-bit product generated in an array of bit cells in a compute-in-memory (CIM) array circuit is configured to receive a higher supply voltage than a supply voltage provided to a bit cell circuit of another bit cell corresponding to another bit of the multi-bit product. A bit cell circuit receiving a higher supply voltage increases a voltage difference between increments of an accumulated voltage, which can increase accuracy of an analog-to-digital converter determining a pop-count. A bit cell circuit of the MSB in the CIM array circuit receives the higher supply voltage to increase accuracy of the MSB which increases accuracy of the CIM array circuit output. A capacitance of a capacitor in the bit cell circuit of the MSB is smaller to avoid an increase in energy consumption due to the higher voltage.


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