The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Nov. 13, 2018
Applicant:
Mitsui Chemicals, Inc., Tokyo, JP;
Inventors:
Hiroko Wachi, Chiba, JP;
Yasuhisa Kayaba, Urayasu, JP;
Hirofumi Tanaka, Tsukuba, JP;
Kenichi Fujii, Yokohama, JP;
Assignee:
MITSUI CHEMICALS, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); H01L 21/311 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); G03F 7/075 (2013.01); H01L 21/31144 (2013.01);
Abstract
Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.