The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Apr. 06, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Yu Wang, Taipei, TW;

Wen-Tsung Huang, Changhua County, TW;

Chih-Wei Hsu, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0285 (2013.01); H01L 27/027 (2013.01); H01L 27/0292 (2013.01);
Abstract

The present disclosure relates to a semiconductor device, including a first source/drain region, a second source/drain region, a base region, a first electrostatic discharge region and a second electrostatic discharge region. The first source/drain region and the second source/drain region are configured to receive a first power voltage and a second power voltage, and are formed on the base region. The first electrostatic discharge region includes a first doped region and a first well. The first doped region is configured to receive the second power voltage, and formed in the first well. The second electrostatic discharge region includes a second doped region and a second well. The second doped region is configured to receive the first power voltage, and formed in the second well. The first source/drain region and the second source/drain region are disposed between the first electrostatic discharge region and the second electrostatic discharge region.


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