The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
May. 29, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jason Lee Nevill, Boise, ID (US);
Preston Allen Thomson, Boise, ID (US);
Chi Ming Chu, Boise, ID (US);
Sheng-Huang Lee, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 5/145 (2013.01); G11C 7/1051 (2013.01); G11C 8/08 (2013.01); G11C 2029/5004 (2013.01);
Abstract
A method of operating a memory device comprises generating a target voltage using a pump circuit of the memory device, the target voltage to be applied to a word line or pillar of a memory cell of the memory device; providing an indication of current generated by the pump circuit after the pump circuit output reaches the target voltage; and determining when the current generated by the pump circuit is greater than a specified threshold current and generating a fault indication according to the determination.