The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Apr. 29, 2021
Applicant:
Hefei Reliance Memory Limited, Hefei, CN;
Inventor:
Danut Manea, Saratoga, CA (US);
Assignee:
Hefei Reliance Memory Limited, Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0038 (2013.01); G11C 2213/79 (2013.01);
Abstract
Circuits and methods are disclosed for voltage-mode bit line precharge for random-access memory cells. A circuit includes an array of random access memory cells; a low-impedance voltage source configured to provide a precharge voltage; and a control circuit configured to precharge a bit line of one of the random access memory cells to the precharge voltage using the low-impedance voltage source prior to reading the one of the random access memory cells.