The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Mar. 04, 2020
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Tsutomu Ogihara, Joetsu, JP;

Tsukasa Watanabe, Joetsu, JP;

Yusuke Biyajima, Joetsu, JP;

Masahiro Kanayama, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); C09D 183/06 (2006.01); C09D 183/08 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C09D 183/06 (2013.01); C09D 183/08 (2013.01); G03F 7/168 (2013.01); G03F 7/2006 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); H01L 21/0275 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract

The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.


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