The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jul. 03, 2019
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Satoru Wakiyama, Kanagawa, JP;
Naoki Jyo, Kanagawa, JP;
Kan Shimizu, Tokyo, JP;
Toshihiko Hayashi, Kanagawa, JP;
Takuya Nakamura, Kumamoto, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 23/3192 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 27/1469 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05547 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/16501 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73257 (2013.01); H01L 2224/81065 (2013.01); H01L 2224/81097 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81948 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/12043 (2013.01);
Abstract
There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.