The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Oct. 21, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chien-Ying Wu, New Taipei, TW;
Li-Hsin Chu, New Taipei, TW;
Chung-Chuan Tseng, Hsinchu, TW;
Chia-Wei Liu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/14649 (2013.01); H01L 27/14689 (2013.01); H01L 27/14694 (2013.01); H01L 27/14609 (2013.01); H01L 27/14669 (2013.01);
Abstract
A method includes epitaxially growing a first III-V compound layer over a semiconductive substrate. A second III-V compound layer is epitaxially grown over the first III-V compound layer. A source/drain contact is formed over the second III-V compound layer. A gate structure is formed over the second III-V compound layer. A pattern is formed shielding the gate structure and the source/drain contact, in which a portion of the second III-V compound layer is free from coverage by the pattern.