The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Dec. 26, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu, TW;
Chenming Hu, Oakland, CA (US);
Po-Tsang Haung, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Abstract
An integrated circuit structure includes a first transistor, an interconnect structure, a first dielectric layer, polycrystalline plugs, a semiconductor structure and a second transistor. The first transistor is formed on a substrate. The interconnect structure is over the first transistor. The first dielectric layer is over the interconnect structure. The polycrystalline plugs extend from a top surface of the dielectric layer into the dielectric layer. The semiconductor structure is disposed over the first dielectric layer. The second transistor is formed on the semiconductor structure.