The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Oct. 23, 2019
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Jian-Hsing Lee, Puzih, TW;

Shao-Chang Huang, Hsinchu, TW;

Chih-Hsuan Lin, Hsinchu, TW;

Yu-Kai Wang, Hsinchu, TW;

Karuna Nidhi, Bihar, IN;

Hwa-Chyi Chiou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 29/41725 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.


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