The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Apr. 14, 2020
Applicant:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Inventors:
Ryan Hatcher, Austin, TX (US);
Titash Rakshit, Austin, TX (US);
Jorge Kittl, Garland, TX (US);
Joon Goo Hong, Austin, TX (US);
Dharmendar Palle, Austin, TX (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 17/16 (2006.01); G06F 17/17 (2006.01); G06G 7/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1659 (2013.01); G06F 17/16 (2013.01); G06F 17/17 (2013.01); G06G 7/16 (2013.01); G11C 11/1673 (2013.01);
Abstract
A method, system and electronic device for mitigating variance in a two transistor two resistive memory element (2T2R) circuit is provided. The method includes calculating a sum of a number of logical 1's in a column of bitcells in the 2T2R circuit, N, of an input vector, sensing output current values from each current line in the column of bitcells and calculating an inner product, M, of the input vector and the bitcells in the column in the 2T2R circuit based on the sensed output current values.