The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
May. 29, 2020
Seoul National University R&db Foundation, Seoul, KR;
Jeong-Yun Sun, Seoul, KR;
Young-Chang Joo, Seoul, KR;
Taek Dong Chung, Dobong-gu, KR;
Hae-Ryung Lee, Seoul, KR;
Seung-Min Lim, Seoul, KR;
Seok Hee Han, Namyangju-si, KR;
Hyunjae Yoo, Seongnam-si, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Abstract
Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.