The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Jul. 27, 2018
Laser Systems Inc., Hokkaido, JP;
Yasuo Ohno, Kanagawa, JP;
Hiroko Itoh, Hokkaido, JP;
LASER SYSTEMS INC., Hokkaido, JP;
Abstract
This semiconductor device is provided with: a substrate which has, on a principal surface thereof, an input unit for inputting an alternating current power from the exterior, a ground connection unit for connecting to ground formed on the exterior, an output unit for outputting a post-adjustment direct current power to the exterior, and a semiconductor layer; a first Schottky barrier diode formed in a first region of the semiconductor layer so that a cathode electrode is connected to the input unit and so that an anode electrode is connected to the ground connection unit; a second Schottky barrier diode formed in a second region of the semiconductor layer so that a cathode electrode is connected to the output unit and so that an anode electrode is connected to the input unit; and a third Schottky barrier diode formed in a third region of the semiconductor layer so that a cathode electrode is connected to the output unit and so that an anode electrode is connected to the ground connection unit.