The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Oct. 29, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Ju Lee, Hsinchu County, TW;
Chun-Fu Cheng, Hsinchu County, TW;
Chung-Wei Wu, Hsinchu County, TW;
Zhiqiang Wu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a plurality of nanowires, a gate structure, a source/drain epitaxy structure, and a semiconductor layer. The substrate has a protrusion portion. The nanowires extend in a first direction above the protrusion portion of the substrate, the nanowires being arranged in a second direction substantially perpendicular to the first direction. The gate structure wraps around each of the nanowires. The source/drain epitaxy structure is in contact with an end surface of each of the nanowires, in which a bottom surface of the source/drain epitaxy structure is lower than a top surface of the protrusion portion of the substrate. The semiconductor layer is in contact with the bottom surface of the epitaxy structure, in which the semiconductor layer is spaced from the protrusion portion of the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile