The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Jul. 28, 2020
Applicant:

Marvell Asia Pte, Ltd., Singapore, SG;

Inventors:

Runzi Chang, Saratoga, CA (US);

Huahung Kao, San Jose, CA (US);

Assignee:

MARVELL ASIA PTE LTD, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/87 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 28/40 (2013.01); H01L 28/91 (2013.01); H01L 2224/16135 (2013.01); H01L 2224/16145 (2013.01);
Abstract

A system on a chip (SOC) device includes a substrate, processing circuitry formed on the substrate, and noise reduction circuitry formed on the processing circuitry. The noise reduction circuitry is configured to reduce noise caused by variations in current consumed by the processing circuitry. The noise reduction circuitry includes a decoupling capacitor, which includes (i) two or more first layers, (ii) one or more second layers interleaved between the first layers, (iii) dielectric layers formed between adjacent first and second layers and configured to electrically isolate between the adjacent first and second layers, (iv) a first contact, which is electrically connected to the first layers so as to form a first electrode of the decoupling capacitor, and (v) a second contact, which is electrically connected to the second layers so as to form a second electrode of the decoupling capacitor.


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