The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Apr. 03, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Boon Hor Lam, Boise, ID (US);

Shawn M. Hilde, Meridian, ID (US);

Karl L. Major, Boise, ID (US);

Garrett Harwell, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/12 (2006.01); G11C 29/44 (2006.01); G11C 11/406 (2006.01); G11C 7/10 (2006.01); G11C 29/14 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12015 (2013.01); G11C 7/1048 (2013.01); G11C 11/40615 (2013.01); G11C 29/14 (2013.01); G11C 29/44 (2013.01);
Abstract

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory device are configured to add variable delays to a command. The variable delays may be provided by a host device (e.g., a test equipment) using a test mode of the memory devices. Alternatively, the variable delays may be stored in nonvolatile memory (NVM) components of the memory devices. Further, mode registers of the memory devices may be set to indicate that the command is associated with the variable delays stored in the NVM components. Further, the memory devices may include delay components configured to add the variable delays to the command. Such variable delays facilitate staggered execution of the command across multiple memory devices so as to avoid (or mitigate) issues related to an instantaneous, large amount of current drawn from a power supply connected to the memory devices.


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