The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Jul. 14, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhenming Zhou, San Jose, CA (US);

Jian Huang, Union City, CA (US);

Jiangli Zhu, San Jose, CA (US);

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/10 (2006.01); G06F 11/14 (2006.01); G06F 11/07 (2006.01); G06F 3/06 (2006.01); G06F 11/30 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/076 (2013.01); G06F 11/0772 (2013.01); G06F 11/1471 (2013.01); G06F 11/3037 (2013.01);
Abstract

An error associated with a read operation corresponding to a target memory die of a memory sub-system is detected. In response to detecting the error, a first read throughput level of the memory sub-system is identified. The first read throughput level is adjusted to a second read throughput level. A read retry operation associated with the target memory die is executed at the second read throughput level.


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