The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Dec. 04, 2020
Applicant:

Amazon Technologies, Inc., Seattle, WA (US);

Inventors:

Itai Avron, Petah Tikva, IL;

Erez Sabbag, Koranit, IL;

Anna Rom-Saksonov, Rosh Haayin, IL;

Assignee:

Amazon Technologies. Inc., Seattle, WA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 11/10 (2006.01); H03M 13/29 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0652 (2013.01); G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0673 (2013.01); G06F 11/10 (2013.01); H03M 13/293 (2013.01);
Abstract

Systems, apparatuses, and corresponding techniques are described for selective erasure decoding on memory devices. Erasure decoding is performed on error correction codes (ECCs) read from memory locations associated with errors that are correctable through erasure decoding, as indicated by erasure information available to a memory controller or other device configured to decode ECCs. The erasure information can indicate locations within individual memory devices and, optionally, at different memory hierarchy levels. When the erasure information indicates that a location being read from is not associated with an error that is correctable through erasure decoding, regular error decoding is performed on ECCs read from such locations. Selective erasure decoding can be performed in connection with separate read operations that access different memory devices or a single read operation that accesses multiple memory devices concurrently.


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