The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Jun. 14, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wen Lo, Taipei, TW;

Shih-Ming Chang, Hsinchu County, TW;

Chun-Hung Liu, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/78 (2012.01); H01J 37/09 (2006.01); H01J 37/317 (2006.01); H01J 37/10 (2006.01);
U.S. Cl.
CPC ...
G03F 1/78 (2013.01); H01J 37/09 (2013.01); H01J 37/3174 (2013.01); H01J 37/10 (2013.01); H01J 2237/0451 (2013.01); H01J 2237/31776 (2013.01);
Abstract

A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.


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