The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Mar. 11, 2022
Applicant:

Yield Engineering Systems, Inc., Fremont, CA (US);

Inventors:

Lei Jing, Santa Clara, CA (US);

M Ziaul Karim, San Jose, CA (US);

Kenneth Sautter, Sunnyvale, CA (US);

Kang Song, San Jose, CA (US);

Assignee:

YIELD ENGINEERING SYSTEMS, INC., Freemont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 1/015 (2006.01); B23K 1/008 (2006.01); B23K 3/08 (2006.01); H01L 23/00 (2006.01); B23K 101/42 (2006.01); B23K 101/40 (2006.01); B23K 1/012 (2006.01); H01L 21/60 (2006.01); B23K 1/00 (2006.01);
U.S. Cl.
CPC ...
B23K 1/015 (2013.01); B23K 1/008 (2013.01); B23K 3/085 (2013.01); H01L 24/742 (2013.01); H01L 24/75 (2013.01); B23K 1/0016 (2013.01); B23K 1/012 (2013.01); B23K 2101/40 (2018.08); B23K 2101/42 (2018.08); H01L 2021/60007 (2013.01); H01L 2021/6027 (2013.01); H01L 2021/60135 (2013.01); H01L 2224/75272 (2013.01); H01L 2224/75283 (2013.01);
Abstract

A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.


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