The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Sep. 07, 2021
Sien (Qingdao) Integrated Circuits Co., Ltd., Shandong, CN;
Min-Hwa Chi, Qingdao, CN;
Min Li, Qingdao, CN;
SiEn (QingDao) Integrated Circuits Co., Ltd., Qingdao, CN;
Abstract
The present application provides a LDMOS transistor having a floating vertical field plate (VFP) and a manufacturing method thereof. The floating VFP comprises a floating field plate polysilicon layer and a laminated structure. The laminated structure comprises a stack of alternate layers of insulating material and ferroelectric material, and in the laminated structure, an outermost layer and an innermost layer are the insulating material. In the present application, the polarization in the ferroelectric material is set in the floating VFP with smaller size, the polarization of the ferroelectric layer enhances the 'charge sharing' effect to produce higher breakdown voltage when the transistor is off; and the polarization of the ferroelectric material layer induces more electrons in the drift zone to reduce on resistance when the transistor is on. Accordingly, the increase of breakdown voltage and the reduction of on resistance can be achieved simultaneously.