The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Apr. 29, 2021
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
The present invention provides a manufacturing method for a semiconductor memory device. The method comprises: providing a substrate, wherein a gate structure of a memory transistor is formed on a memory area of the substrate, and a first layer used for forming a gate structure of a peripheral transistor is formed on a peripheral area of the substrate; performing lightly doped drain ion implantation on an upper part of a portion, on two sides of the gate structure of the memory transistor, of the memory area of the substrate by applying the first layer as a mask of the peripheral area; and etching the first layer to form the gate structure of the peripheral transistor. According to the present invention, an ion diffusion degree of source and drain electrodes of the memory area may be effectively increased, and the uniformity of a memory cell device is improved.