The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Mar. 04, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hai Biao Yao, Singapore, SG;
Su Xing, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/36 (2013.01); H01L 29/66568 (2013.01); H01L 29/7841 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 29/167 (2013.01);
Abstract
An SOI semiconductor device includes a substrate, a buried oxide layer disposed on the substrate, a top semiconductor layer disposed on the buried oxide layer, a source doping region and a drain doping region in the top semiconductor layer, a channel region between the source doping region and the drain doping region in the top semiconductor layer, a gate electrode on the channel region, and an embedded doping region disposed in the top semiconductor layer and directly under the channel region. The embedded doping region acts as a hole sink to alleviate or avoid floating body effects.