The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Jan. 31, 2020
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Sony Varghese, Manchester, MA (US);

Naushad Variam, Marblehead, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10876 (2013.01); H01J 37/32 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 27/10823 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 29/665 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01L 29/785 (2013.01);
Abstract

A method may include providing a substrate, the substrate comprising a substrate base and a patterning stack, disposed on the substrate base. The substrate may include first linear structures in the patterning stack, the first linear structures being elongated along a first direction; and second linear structures in the patterning stack, the second linear structures being elongated along a second direction, the second direction forming a non-zero angle with respect to the first direction. The method may also include selectively forming a set of sidewall spacers on one set of sidewalls of the second linear structures.


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