Semiconductor device and manufacturing method thereof

Abstract

A device comprises a first transistor disposed within a first device region of a substrate and a second transistor disposed within a second device region of the substrate. The first transistor comprises first source/drain regions, a first gate structure laterally between the first source/drain regions, and first gate spacers respectively on opposite sidewalls of the first gate structure. The second transistor comprises second source/drain regions, a second gate structure laterally between the second source/drain regions, and second gate spacers respectively on opposite sidewalls of the second gate structure. The second source/drain regions of the second transistor have a maximal width greater than a maximal width of the first source/drain regions of the first transistor, but the second gate spacers of the second transistor have a thickness less than a thickness of the first gate spacers.