The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Jun. 03, 2020
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Changbo Lee, Asan-si, KR;

Joonseok Oh, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 21/48 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49861 (2013.01); H01L 21/311 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 2924/15174 (2013.01);
Abstract

A fan-out type semiconductor package may include a frame, a semiconductor chip, a lower photoimageable dielectric (PID), a lower redistribution layer (RDL), a molding member, a first upper RDL, an upper PID and a second upper RDL. The frame may include an insulation substrate having a cavity and a middle RDL formed through the insulation substrate, with the semiconductor chip arranged in the cavity. The first upper RDL may be arranged on an upper surface of the insulation substrate. The first upper RDL may be connected to an upper end of the middle RDL. The upper PID may be formed on upper surfaces of the frame, the semiconductor chip and the molding member. The second upper RDL may be formed in the upper PID. A photolithography process may be applied to the upper PID so that the second upper RDL formed on the upper PID may have a fine pattern.


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