The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Dec. 14, 2018
Lg Chem, Ltd., Seoul, KR;
Eun Kyu Her, Daejeon, KR;
Song Ho Jang, Daejeon, KR;
Chung Wan Kim, Daejeon, KR;
Bu Gon Shin, Daejeon, KR;
Jeong Ho Park, Daejeon, KR;
Jung Hwan Yoon, Daejeon, KR;
So Young Choo, Daejeon, KR;
LG CHEM, LTD., Seoul, KR;
Abstract
A plasma etching method using a Faraday cage, including: providing an etch substrate in a Faraday cage, where the etch substrate includes a metal mask provided on one surface thereof, and where an upper surface of the Faraday cage is provided with a mesh portion; a first patterning step of forming a first pattern area on the etch substrate; and a second patterning step of forming a second pattern area on the etch substrate after shielding at least a part of the mesh portion with a shutter. The first pattern area includes a first groove pattern having a depth gradient of 0 to 40 nm per 5 mm, and the second pattern area includes a second groove pattern having a depth gradient of 50 to 300 nm per 5 mm.