The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Apr. 15, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Dan Yu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/44 (2006.01); H01L 39/02 (2006.01); H01L 39/16 (2006.01); H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
G11C 11/44 (2013.01); H01L 39/02 (2013.01); H01L 39/16 (2013.01); H01L 39/24 (2013.01);
Abstract

Memory devices and methods are provided. In one aspect, a memory device may comprise a first field element, a second field element, a movable magnetic element, and a first heater. The first field element may be a superconductor. The second field element may be disposed facing the first field element and at a first distance from the first field element. The movable magnetic element may be repelled by the second field element and disposed in a space between the first field element and the second field element. The first heater may be arranged near the first field element. The movable magnetic element may move toward the first field element in response to a first electric current that passes through the first heater.


Find Patent Forward Citations

Yu, Dan. (2022). Advanced memory structure and device (U.S. Patent No. 11462264). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11462264

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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