The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Feb. 07, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xiaodong Wang, San Jose, CA (US);

Rongjun Wang, Dublin, CA (US);

Hanbing Wu, Millbrae, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/58 (2006.01); C23C 14/34 (2006.01); C23C 14/08 (2006.01); C23C 14/14 (2006.01); C23C 14/18 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
C23C 14/5853 (2013.01); C23C 14/081 (2013.01); C23C 14/14 (2013.01); C23C 14/185 (2013.01); C23C 14/3464 (2013.01); C23C 14/352 (2013.01); H01J 37/3417 (2013.01); H01J 37/3447 (2013.01); H01J 37/3405 (2013.01); H01J 37/3429 (2013.01); H01L 43/12 (2013.01);
Abstract

Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.


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