The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Aug. 31, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
En-Hsiang Yeh, Hsin-Chu, TW;
Wen-Sheng Chen, Taipei, TW;
Chia-Ming Liang, Hsinchu, TW;
Chung-Ho Chai, HsinChu, TW;
Zong-You Li, Hsinchu, TW;
Tzu-Jin Yeh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The measurement method includes operations of applying a first gate bias voltage to a gate terminal of a first transistor that is included in a radio frequency (RF) power amplifier during a direct current (DC) measurement period, wherein the first transistor operates in a linear operation mode during the DC measurement period; measuring a first drain-source voltage of the first transistor and a current flowing through the first transistor via a connection node during the DC measurement period; applying a second gate bias voltage and a drain bias voltage to a gate terminal and a drain terminal of a second transistor that is electrically connected to the first transistor via the connection node; and measuring a DC value of the second transistor via the connection node during the DC measurement period.