The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Feb. 23, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Muneyuki Nishioka, Kobe, JP;
Kazuaki Konoike, Kobe, JP;
Takuya Yanagisawa, Kobe, JP;
Yasuaki Higuchi, Kobe, JP;
Yoshiaki Hagi, Kobe, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 μm and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0×10to 8.0×10cm, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm, and when am atomic concentration of tin is from 1.0×10to 4.0×10cmor an atomic concentration of iron is from 5.0×10to 1.0×10cm, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm.