The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Apr. 16, 2020
Applicant:
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Inventors:
Assignee:
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/8258 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/0217 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/28556 (2013.01); H01L 21/28575 (2013.01); H01L 21/30612 (2013.01); H01L 21/8258 (2013.01); H01L 29/16 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66128 (2013.01); H01L 29/66136 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/8611 (2013.01);
Abstract
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a doped substrate; a barrier layer, disposed on the doped substrate; a channel layer, disposed between the doped substrate and the barrier layer; and a doped semiconductor structure, disposed in the doped substrate, where a band gap of the barrier layer is greater than a band gap of the channel layer, the doped substrate and the doped semiconductor structure have different polarities, and the doped substrate includes a doped silicon substrate.