The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

May. 11, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shigeru Sugioka, Higashihiroshima, JP;

Hidenori Yamaguchi, Higashihiroshima, JP;

Noriaki Fujiki, Kawanishi, JP;

Keizo Kawakita, Higashihiroshima, JP;

Raj K. Bansal, Taichung, TW;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 23/49883 (2013.01); H01L 23/5383 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor device includes a main circuit region; and a scribe region surrounding the main circuit region; wherein the main circuit region and the scribe region comprises first and second insulating films and a low-k film formed therebetween; and wherein the low-k film of the scribe region includes a plurality of cavities lining along a border between the main circuit region and the scribe region.


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Quick Actions:

Sugioka, Shigeru. (2022). Semiconductor device and method of forming the same (U.S. Patent No. 11456253). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11456253

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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