The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Sep. 22, 2020
Nanya Technology Corporation, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of manufacturing a semiconductor device is provided. A precursor structure is formed, in which the precursor structure includes a patterned substrate having at least one trench therein, an oxide layer covering the patterned substrate, and a nitride layer on the oxide layer and exposing a portion of the oxide layer in the trench. A first barrier layer and a first gate structure is formed on the oxide layer. A portion of the first barrier layer is removed with an etchant including CF, CF, CF, CF, F, NF, SF, CHF, HF, COF, ClFor HOto expose a sidewall of the oxide layer. A second barrier layer is formed on the first gate structure and the oxide layer. A portion of the second barrier layer is removed with the etchant. A second gate structure is formed on the second barrier layer.