Charged particle beam writing method and charged particle beam writing apparatus

Abstract

In one embodiment, a charged particle beam writing method includes dividing a figure pattern defined in writing data into a plurality of shot figures, virtually dividing a writing target substrate into a plurality of mesh regions, and calculating a correction irradiation amount to correct proximity effect and middle range effect for each of the mesh regions based on a position of the figure pattern, calculating an irradiation amount for each of the plurality of shot figures using the correction irradiation amount, calculating an insufficient irradiation amount at an edge portion of the shot figure based on the irradiation amount, resizing the shot figure based on the insufficient irradiation amount, and writing the resized shot figure on the writing target substrate using a charged particle beam in the irradiation amount.