The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

May. 28, 2019
Applicant:

The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);

Inventors:

Mark A. Kasevich, Palo Alto, CA (US);

Stewart A. Koppell, Menlo Park, CA (US);

Brannon Klopfer, Stanford, CA (US);

Thomas Juffmann, Vienna, AT;

Marian Mankos, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/153 (2006.01); H01J 37/145 (2006.01); H01J 37/244 (2006.01); H01J 37/29 (2006.01);
U.S. Cl.
CPC ...
H01J 37/153 (2013.01); H01J 37/145 (2013.01); H01J 37/244 (2013.01); H01J 37/29 (2013.01); H01J 2237/1534 (2013.01);
Abstract

Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting −1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected.


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