IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11455452 B1

PDFFull Text
Date of Patent:
Sep. 27, 2022

Filed:

Jul. 31, 2020

Variable implant and wafer-level feed-forward for dopant dose optimization

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Mahalingam Nandakumar, Richardson, TX (US);

Murlidhar Bashyam, Frisco, TX (US);

Alwin Tsao, Garland, TX (US);

Douglas Newman, Crowley, TX (US);

Assignee:

TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);

Attorneys:

Andrew R. Ralston

Charles A. Brill

Frank D. Cimino

Primary Examiner:

Binh C Tat

Int. Cl.
CPC ...
G06F 30/30 (2020.01); G06F 30/367 (2020.01); H01L 21/66 (2006.01); G06F 30/398 (2020.01); G06F 30/392 (2020.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); G06F 30/373 (2020.01);
U.S. Cl.
CPC ...
G06F 30/367 (2020.01); G06F 30/373 (2020.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); H01L 22/20 (2013.01); H01L 29/4011 (2019.08); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/6659 (2013.01);
Abstract

The present disclosure provides a method for adjusting implant parameter conditions in semiconductor processing by wafer and by wafer zone using in-line measurements from previous operations and a feed-forward computer model. The feed-forward model is based on a sensitivity map of in-line measured data and its effect of electrical performance. Feed-forward computer models that adjust implant parameters by wafer and by zone improve both wafer-to-wafer and within wafer electrical uniformity in semiconductor devices.

Find Patent Forward Citations

Loading…