The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Mar. 23, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chin-Shen Lin, Taipei, TW;

Ming-Hsien Lin, Hsinchu County, TW;

Wan-Yu Lo, Taoyuan, TW;

Meng-Xiang Lee, Dounan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/00 (2020.01); G06F 30/3308 (2020.01); G06F 30/392 (2020.01); G06F 119/10 (2020.01); G06F 119/02 (2020.01);
U.S. Cl.
CPC ...
G06F 30/3308 (2020.01); G06F 30/392 (2020.01); G06F 2119/02 (2020.01); G06F 2119/10 (2020.01);
Abstract

Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. EM rule is kept on the metal segment when a single via is formed over and in contact with the metal segment in the layout. The EM rule is relaxed on the metal segment when two first vias are formed over and in contact with the metal segment in the layout. The two first vias have the same current direction.


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