The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Apr. 07, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Zhenxing Bi, Dunn Loring, VA (US);

Kangguo Cheng, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Xin Miao, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B82Y 30/00 (2011.01); C12Q 1/6869 (2018.01); G01N 33/487 (2006.01); G01N 27/447 (2006.01); B81B 1/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
C12Q 1/6869 (2013.01); B81B 1/00 (2013.01); B81B 1/004 (2013.01); B82Y 30/00 (2013.01); G01N 27/44791 (2013.01); G01N 33/48721 (2013.01); B81C 1/00087 (2013.01);
Abstract

A method for fabricating a stacked nanopore includes forming a stack of layers having alternating conductive lines and dielectric layers on a substrate, and patterning the stack to form a staircase structure with the conductive lines having a length gradually changing at each level in the stack. The method also includes depositing and planarizing a dielectric material over the staircase structure, forming contacts through the dielectric material to the conductive lines for each level of conductive lines, etching a nanopore through the stack of layers to form pairs of opposing electrodes across the nanopore using the conductive lines; and opening up the substrate to expose the nanopore.


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