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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11453734 B1

PDFFull Text
Date of Patent:
Sep. 27, 2022

Filed:

Apr. 29, 2019

Treatment liquid and pattern forming method

Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Tetsuya Kamimura, Shizuoka, JP;

Michihiro Shirakawa, Shizuoka, JP;

Tadashi Oomatsu, Shizuoka, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

JCIPRNET

Primary Examiner:

Daborah Chacko-Davis

Int. Cl.
CPC ...
G03F 7/038 (2006.01); C08F 212/14 (2006.01); C08F 220/16 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); G03F 7/075 (2006.01); H01L 21/027 (2006.01); C08F 220/28 (2006.01); C08F 220/36 (2006.01); C08F 220/18 (2006.01);
U.S. Cl.
CPC ...
C08F 212/24 (2020.02); C08F 220/16 (2013.01); C08F 220/1807 (2020.02); C08F 220/283 (2020.02); C08F 220/365 (2020.02); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/0758 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/3021 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); H01L 21/027 (2013.01); C08F 220/1809 (2020.02); C08F 220/1811 (2020.02); C08F 220/1812 (2020.02); C08F 220/1818 (2020.02); C08F 220/281 (2020.02); C08F 220/282 (2020.02);
Abstract

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.

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