The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Oct. 22, 2019
Fuji Electric Co., Ltd., Kawasaki, JP;
Tohru Shirakawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device is an IGBT of a trench-gate structure and has a storage region directly beneath a p-type base region. The semiconductor device has gate trenches and dummy trenches as trenches configuring the trench-gate structure. An interval (mesa width) at which the trenches are disposed is in a range of 0.7 μm to 2 μm. In each of the gate trenches, a gate electrode of a gate potential is provided via a first gate insulating film. In each of the dummy trenches, a dummy gate electrode of an emitter potential is provided via a second gate insulating film. A total number of the gate electrode is in a range of 60% to 84% of a total number of the dummy electrodes.