The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Jul. 26, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Justin Oberst, Beaverton, OR (US);

Bryan L. Buckalew, Tualatin, OR (US);

Stephen J. Banik, Happy Valley, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 2224/02335 (2013.01); H01L 2224/03003 (2013.01); H01L 2224/03466 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11912 (2013.01);
Abstract

In one example, a method for redistribution layer (RDL) process is described. A substrate is provided. A dielectric layer is deposited on top of the substrate. The dielectric layer is patterned. A barrier and copper seed layer are deposited on top of the dielectric layer. A photoresist layer is applied on top of the barrier and copper seed layer. The photoresist layer is patterned to correspond with the dielectric layer pattern. Copper is electrodepositing in the patterned regions exposed by the photoresist layer. The photoresist layer is removed. The copper and seed barrier are etched.


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