The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Sep. 18, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John D. Hopkins, Meridian, ID (US);

George Matamis, Eagle, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/11 (2006.01); H01L 21/768 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

Some embodiments include an assembly having a memory stack which includes dielectric levels and conductive levels. A select gate structure is over the memory stack. A trench extends through the select gate structure. The trench has a first side and an opposing second side, along a cross-section. The trench splits the select gate structure into a first select gate configuration and a second select gate configuration. A void is within the trench and is laterally between the first and second select gate configurations. Channel material pillars extend through the memory stack. Memory cells are along the channel material pillars.


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