The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Sep. 13, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Shing-Yih Shih, New Taipei, TW;

Chih-Ching Lin, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76804 (2013.01); H01L 21/31144 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

A semiconductor structure includes a semiconductor device, an interconnect structure, a dielectric layer, and a redistribution layer (RDL). The interconnect structure is disposed over the semiconductor device. The dielectric layer is disposed over the interconnect structure. The RDL includes a conductive structure over the dielectric layer and a conductive via extending downwards from the conductive structure and through the dielectric layer. The conductive via includes a bottom portion, a top portion and a tapered portion between the bottom and top portions, in which the tapered portion has a width variation greater than that of the bottom and top portions.


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