The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Jun. 28, 2019
Crayonano As, Trondheim, NO;
Norwegian University of Science and Technology (Ntnu), Trondheim, NO;
Dong Chul Kim, Trondheim, NO;
Ida Marie Høiaas, Trondheim, NO;
Mazid Munshi, Trondheim, NO;
Bjørn Ove Fimland, Trondheim, NO;
Helge Weman, Ecublens, CH;
Dingding Ren, Trondheim, NO;
Dasa Dheeraj, Trondheim, NO;
Crayonano As, Trondheim, NO;
Norwegian University Of Science And Technology (NTNU), Trondheim, NO;
Abstract
A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.