The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Jul. 29, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Tae H. Kim, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4091 (2006.01); G11C 11/22 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01); G11C 11/4094 (2013.01);
Abstract

Apparatuses and methods including memory cells, digit lines, and sense amplifiers are described. An example apparatus includes a pair of digit lines including first and second digit lines, a sense amplifier coupled to the pair of digit lines and configured to amplify a voltage difference between the first and second digit lines when activated, and a plurality of memory cells. A memory cell of the plurality of memory cells includes a first node coupled to the first digit line and includes a second node coupled to the second digit line. The memory cell of the plurality of memory cells is configured to store a respective voltage and/or charge at a respective cell node and couple the respective voltage and/or charge to the first node when activated.


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