The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Nov. 15, 2019
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Ryohei Yamamoto, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); B23K 26/53 (2014.01); B23K 26/00 (2014.01); B23K 26/02 (2014.01); B23K 103/00 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/0006 (2013.01); B23K 26/0093 (2013.01); B23K 26/02 (2013.01); H01L 29/1608 (2013.01); B23K 2101/40 (2018.08); B23K 2103/52 (2018.08);
Abstract

A wafer producing method for producing a wafer from an ingot, the ingot being previously formed with a separation layer along which the wafer is to be separated from the ingot. The wafer producing method includes a first ultrasonic vibration applying step of applying ultrasonic vibration to a given area of the ingot at a high density to thereby form a partially broken portion where a part of the separation layer is broken, a second ultrasonic vibration applying step of applying the ultrasonic vibration to the whole area of the ingot larger than the given area at a low density, after performing the first ultrasonic vibration applying step, thereby forming a fully broken portion where the separation layer is fully broken in such a manner that breaking starts from the partially broken portion, and a separating step of separating the wafer from the ingot along the fully broken portion.


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